auf Bestellung 4629 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.75 EUR |
| 10+ | 1.54 EUR |
| 100+ | 1.33 EUR |
| 250+ | 1.32 EUR |
| 500+ | 1.21 EUR |
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Technische Details FDS8870 onsemi / Fairchild
Description: MOSFET N-CH 30V 18A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 15 V.
Weitere Produktangebote FDS8870 nach Preis ab 1.32 EUR bis 2.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDS8870 | Hersteller : onsemi |
 Description: MOSFET N-CH 30V 18A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 15 V |
auf Bestellung 783 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS8870 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDS8870 | Hersteller : FAIRCHILD |
Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R |
auf Bestellung 2937 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDS8870 | Hersteller : FAIRCHILD |
Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R |
auf Bestellung 1794 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDS8870 | Hersteller : FAIRCHILD |
Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS8870 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS8870 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 112nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDS8870 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 18A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDS8870 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 112nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |