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FDS89141

FDS89141 onsemi


fds89141-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 3.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.87 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDS89141 onsemi

Description: MOSFET 2N-CH 100V 3.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V, Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.

Weitere Produktangebote FDS89141 nach Preis ab 2.15 EUR bis 6.11 EUR

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FDS89141 FDS89141 Hersteller : onsemi / Fairchild fds89141-d.pdf MOSFETs 100V Dual N-Channel PowerTrench MOSFET
auf Bestellung 6258 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.93 EUR
10+3.73 EUR
100+2.62 EUR
500+2.31 EUR
1000+2.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDS89141 FDS89141 Hersteller : onsemi fds89141-d.pdf Description: MOSFET 2N-CH 100V 3.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.04 EUR
10+3.95 EUR
100+2.77 EUR
500+2.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDS89141 FDS89141 Hersteller : onsemi fds89141-d.pdf MOSFETs 100V Dual N-Channel PowerTrench MOSFET
auf Bestellung 5570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.11 EUR
10+4.01 EUR
100+2.8 EUR
500+2.32 EUR
2500+2.16 EUR
Im Einkaufswagen  Stück im Wert von  UAH