auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 2.74 EUR |
| 5000+ | 2.43 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDS8935 ON Semiconductor
Description: MOSFET 2P-CH 80V 2.1A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 2.1A, Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V, Rds On (Max) @ Id, Vgs: 183mOhm @ 2.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Weitere Produktangebote FDS8935 nach Preis ab 2.43 EUR bis 2.74 EUR
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FDS8935 | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 80V 2.1A 8-Pin SOIC T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS8935 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -80V; -2.1A; 3.1W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -80V Drain current: -2.1A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 308mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDS8935 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 80V 2.1A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS8935 | Hersteller : onsemi |
Description: MOSFET 2P-CH 80V 2.1A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 2.1A Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V Rds On (Max) @ Id, Vgs: 183mOhm @ 2.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FDS8935 | Hersteller : onsemi |
Description: MOSFET 2P-CH 80V 2.1A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 2.1A Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V Rds On (Max) @ Id, Vgs: 183mOhm @ 2.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FDS8935 | Hersteller : onsemi / Fairchild |
MOSFET -80V Dual P-Channel PowerTrench MOSFET |
Produkt ist nicht verfügbar |
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FDS8935 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -80V; -2.1A; 3.1W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -80V Drain current: -2.1A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 308mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |