Technische Details FDS8958B ON Semiconductor
Description: MOSFET N/P-CH 30V 6.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V, Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote FDS8958B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDS8958B | onsemi |
 Description: MOSFET N/P-CH 30V 6.4A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
FDS8958B | onsemi |
Description: MOSFET N/P-CH 30V 6.4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FDS8958B | onsemi |
MOSFETs 30V 6.4A Dual N&P Ch PowerTrench |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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|
FDS8958B | onsemi / Fairchild |
MOSFETs 30V 6.4A Dual N&P Ch PowerTrench |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDS8958B |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 6.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET N/P-CH 30V 6.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDS8958B |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 6.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET N/P-CH 30V 6.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS8958B |
|
Hersteller: onsemi
MOSFETs 30V 6.4A Dual N&P Ch PowerTrench
MOSFETs 30V 6.4A Dual N&P Ch PowerTrench
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS8958B |
|
Hersteller: onsemi / Fairchild
MOSFETs 30V 6.4A Dual N&P Ch PowerTrench
MOSFETs 30V 6.4A Dual N&P Ch PowerTrench
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH