| Anzahl | Preis |
|---|---|
| 3+ | 1.39 EUR |
| 10+ | 1.23 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.74 EUR |
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Technische Details FDU3N50NZTU onsemi
Description: MOSFET N-CH 500V 2.5A DPAK3, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK3 (IPAK), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.
Weitere Produktangebote FDU3N50NZTU nach Preis ab 0.51 EUR bis 0.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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|---|---|---|---|---|---|---|---|
| FDU3N50NZTU | onsemi |
 Description: MOSFET N-CH 500V 2.5A DPAK3Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK3 (IPAK) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk |
auf Bestellung 8980 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| FDU3N50NZTU | ON Semiconductor |
|
auf Bestellung 5010 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDU3N50NZTU |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 2.5A DPAK3
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK3 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Description: MOSFET N-CH 500V 2.5A DPAK3
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK3 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
auf Bestellung 8980 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 980+ | 0.51 EUR |
| FDU3N50NZTU |
|
Hersteller: ON Semiconductor
auf Bestellung 5010 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH