FDV301N-F169 ON Semiconductor

Description: MOSFET N-CH 25V 220MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Part Status: Obsolete, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1.06V @ 250µA, Power Dissipation (Max): 350mW (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 220mA (Ta).