FDV301N-F169 ON Semiconductor
auf Bestellung 7160 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6212+ | 0.087 EUR |
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Technische Details FDV301N-F169 ON Semiconductor
Description: MOSFET N-CH 25V 220MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.06V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 10 V.
Weitere Produktangebote FDV301N-F169 nach Preis ab 0.061 EUR bis 0.087 EUR
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FDV301N-F169 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 25V 0.22A 3-Pin SOT-23 T/R |
auf Bestellung 107196 Stücke: Lieferzeit 14-21 Tag (e) |
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FDV301N-F169 | Hersteller : onsemi |
Description: MOSFET N-CH 25V 220MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.06V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 10 V |
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