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FDWS86068-F085

FDWS86068-F085 onsemi

fdws86068-f085-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 100V 80A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.42 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDWS86068-F085 onsemi

Description: MOSFET N-CH 100V 80A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V, Power Dissipation (Max): 214W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFN (5.1x6.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote FDWS86068-F085 nach Preis ab 2.96 EUR bis 6.85 EUR

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FDWS86068-F085 FDWS86068-F085 Hersteller : onsemi fdws86068-f085-d.pdf Description: MOSFET N-CH 100V 80A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.85 EUR
10+4.52 EUR
100+3.2 EUR
500+2.96 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDWS86068-F085 FDWS86068-F085 Hersteller : onsemi fdws86068-f085-d.pdf MOSFETs 80V N-Chnl Power Trench MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDWS86068-F085 Hersteller : ONSEMI fdws86068-f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH