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FDWS86068-F085

FDWS86068-F085 onsemi

FDWS86068_F085_D-2313072.pdf Hersteller: onsemi
MOSFET 80V N-Chnl Power Trench MOSFET
auf Bestellung 2870 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+8.22 EUR
10+ 6.89 EUR
25+ 6.5 EUR
100+ 5.59 EUR
250+ 5.28 EUR
500+ 4.97 EUR
1000+ 4.24 EUR
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Technische Details FDWS86068-F085 onsemi

Description: MOSFET N-CH 100V 80A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V, Power Dissipation (Max): 214W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFN (5.1x6.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V.

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FDWS86068-F085 FDWS86068-F085 Hersteller : ON Semiconductor fdws86068-f085-d.pdf Trans MOSFET N-CH 100V 80A Automotive 8-Pin DFN EP T/R
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FDWS86068-F085 FDWS86068-F085 Hersteller : onsemi fdws86068-f085-d.pdf Description: MOSFET N-CH 100V 80A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V
Produkt ist nicht verfügbar
FDWS86068-F085 FDWS86068-F085 Hersteller : onsemi fdws86068-f085-d.pdf Description: MOSFET N-CH 100V 80A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V
Produkt ist nicht verfügbar