FDWS86068-F085 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 80A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (5.1x6.3)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Ta)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 2.42 EUR |
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Technische Details FDWS86068-F085 onsemi
Description: MOSFET N-CH 100V 80A 8DFN, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-DFN (5.1x6.3), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 214W (Ta), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDWS86068-F085 nach Preis ab 2.96 EUR bis 6.85 EUR
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FDWS86068-F085 | onsemi |
Description: MOSFET N-CH 100V 80A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V Power Dissipation (Max): 214W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (5.1x6.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 12715 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDWS86068-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 80A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 80A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5.1x6.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 12715 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.85 EUR |
| 10+ | 4.52 EUR |
| 100+ | 3.2 EUR |
| 500+ | 2.96 EUR |