auf Bestellung 3000 Stücke:
Lieferzeit 157-161 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.53 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.67 EUR |
| 250+ | 1.55 EUR |
| 500+ | 1.41 EUR |
| 1000+ | 1.21 EUR |
| 3000+ | 1.15 EUR |
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Technische Details FDWS9509L-F085 onsemi
Description: MOSFET P-CH 40V 65A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V, Power Dissipation (Max): 107W (Tj), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-DFN (5.1x6.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote FDWS9509L-F085
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FDWS9509L-F085 Produktcode: 170673
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 Transistoren > Transistoren P-Kanal-Feld |
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FDWS9509L-F085 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 40V 65A Automotive 8-Pin DFNW EP T/R |
Produkt ist nicht verfügbar |
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FDWS9509L-F085 | Hersteller : onsemi |
Description: MOSFET P-CH 40V 65A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V Power Dissipation (Max): 107W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-DFN (5.1x6.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FDWS9509L-F085 | Hersteller : onsemi |
Description: MOSFET P-CH 40V 65A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V Power Dissipation (Max): 107W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-DFN (5.1x6.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FDWS9509L-F085 | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8 Kind of package: reel; tape Case: DFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain current: -65A Drain-source voltage: -40V Gate charge: 67nC On-state resistance: 13mΩ Gate-source voltage: ±16V Power dissipation: 107W Application: automotive industry |
Produkt ist nicht verfügbar |