FDY102PZ onsemi / Fairchild
auf Bestellung 219344 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details FDY102PZ onsemi / Fairchild
Description: MOSFET P-CH 20V 830MA SC89-3, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 830mA (Ta), Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V, Power Dissipation (Max): 625mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-89-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V.
Weitere Produktangebote FDY102PZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDY102PZ | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 20V 0.83A 3-Pin SOT-523FL T/R |
auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDY102PZ | Hersteller : onsemi |
Description: MOSFET P-CH 20V 830MA SC89-3 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 830mA (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V |
Produkt ist nicht verfügbar |
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FDY102PZ | Hersteller : onsemi |
Description: MOSFET P-CH 20V 830MA SC89-3 Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 830mA (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 830mA, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 10 V |
Produkt ist nicht verfügbar |