Weitere Produktangebote FDY302NZ nach Preis ab 0.15 EUR bis 0.56 EUR
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FDY302NZ | onsemi |
Description: MOSFET N-CH 20V 600MA SC89-3Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Part Status: Active Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY302NZ | onsemi |
Description: MOSFET N-CH 20V 600MA SC89-3Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) |
auf Bestellung 6386 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY302NZ | onsemi / Fairchild |
MOSFET 20V Sgl N-Ch 2.5V Spec PwrTrench |
auf Bestellung 38378 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDY302NZ |
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Hersteller: onsemi
Description: MOSFET N-CH 20V 600MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Description: MOSFET N-CH 20V 600MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
| FDY302NZ |
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Hersteller: onsemi
Description: MOSFET N-CH 20V 600MA SC89-3
Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Description: MOSFET N-CH 20V 600MA SC89-3
Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
auf Bestellung 6386 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 40+ | 0.44 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.17 EUR |
| FDY302NZ |
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Hersteller: onsemi / Fairchild
MOSFET 20V Sgl N-Ch 2.5V Spec PwrTrench
MOSFET 20V Sgl N-Ch 2.5V Spec PwrTrench
auf Bestellung 38378 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH


