Weitere Produktangebote FDY302NZ nach Preis ab 0.15 EUR bis 0.56 EUR
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FDY302NZ | Hersteller : onsemi |
 Description: MOSFET N-CH 20V 600MA SC89-3Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-89-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY302NZ | Hersteller : onsemi |
Description: MOSFET N-CH 20V 600MA SC89-3 Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-89-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
auf Bestellung 6386 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY302NZ | Hersteller : onsemi / Fairchild |
MOSFET 20V Sgl N-Ch 2.5V Spec PwrTrench |
auf Bestellung 38378 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDY302NZ | Hersteller : On Semiconductor |
SC-89-3 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |