FDY4000CZ ON-Semiconductor

Description: MOSFET N/P-CH 20V 0.6A SOT563F, Supplier Device Package: SOT-563F, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V, Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 600mA, 350mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 446mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Part Status: Active.