FDZ191P_P onsemi
Hersteller: onsemi
Description: MOSFET P-CH 20V 3A 6WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-WLCSP (1x1.5)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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Technische Details FDZ191P_P onsemi
Description: MOSFET P-CH 20V 3A 6WLCSP, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Obsolete, Supplier Device Package: 6-WLCSP (1x1.5), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.9W (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UFBGA, WLCSP, Packaging: Tape & Reel (TR).