Technische Details FEP16GTHE3/45 Vishay Semiconductors
Description: DIODE ARRAY GP 400V 16A TO-220-3, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 400 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-220-3, Current - Average Rectified (Io) (per Diode): 16A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 400 V.
Weitere Produktangebote FEP16GTHE3/45
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FEP16GTHE3/45 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 400V 16A TO-220-3Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 400 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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