FES16GTR ON Semiconductor

Description: DIODE GEN PURP 400V 16A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 170pF @ 4V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V.