FES1D TRTB FAGOR
Hersteller: FAGOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; DO214AC,SMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; DO214AC,SMA; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
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Technische Details FES1D TRTB FAGOR
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 200V; 1A; 50ns; DO214AC,SMA; Ufmax: 0.95V, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 200V, Load current: 1A, Reverse recovery time: 50ns, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; ultrafast switching, Case: DO214AC; SMA, Max. forward voltage: 0.95V, Max. forward impulse current: 30A, Kind of package: reel; tape.