FESB16DT-E3/45 Vishay General Semiconductor
auf Bestellung 5798 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.71 EUR |
| 10+ | 2.20 EUR |
| 100+ | 1.80 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.30 EUR |
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Technische Details FESB16DT-E3/45 Vishay General Semiconductor
Description: DIODE GEN PURP 200V 16A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 175pF @ 4V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote FESB16DT-E3/45
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FESB16DT-E3/45 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 16A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 175pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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