FESB16GT-E3/81 Vishay General Semiconductor - Diodes Division


fes16jt.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+1.56 EUR
1600+1.32 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FESB16GT-E3/81 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 400V 16A TO263AB, Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: TO-263AB (D²PAK), Current - Average Rectified (Io): 16A, Capacitance @ Vr, F: 175pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

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FESB16GT-E3/81 FESB16GT-E3/81 Vishay General Semiconductor - Diodes Division fes16jt.pdf Description: DIODE GEN PURP 400V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 1935 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.78 EUR
10+2.31 EUR
100+1.84 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16GT-E3/81 FESB16GT-E3/81 Vishay General Semiconductor fes16jt.pdf Rectifiers 400 Volt 16 Amp 50ns Single
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.03 EUR
10+2.11 EUR
25+2.09 EUR
100+1.62 EUR
250+1.56 EUR
500+1.33 EUR
800+1.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FESB16GT-E3/81 fes16jt.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 16A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 1935 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.78 EUR
10+2.31 EUR
100+1.84 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FESB16GT-E3/81 fes16jt.pdf
Hersteller: Vishay General Semiconductor
Rectifiers 400 Volt 16 Amp 50ns Single
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.03 EUR
10+2.11 EUR
25+2.09 EUR
100+1.62 EUR
250+1.56 EUR
500+1.33 EUR
800+1.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH