FESB16JT-E3/45 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 16A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 145pF @ 4V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.