FF06MR12A04MA2AKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: HYBRIDPACK DSC S MODULE WITH SIC
Packaging: Tube
Package / Case: 11-PowerDIP Module (2.091", 53.10mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A
Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 850V
Rds On (Max) @ Id, Vgs: 5.56mOhm @ 190A, 18V
Gate Charge (Qg) (Max) @ Vgs: 420nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 60mA
Supplier Device Package: PG-MDIP-11-1
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 348 EUR |
| 12+ | 295.17 EUR |
| 36+ | 281.27 EUR |
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Technische Details FF06MR12A04MA2AKSA1 Infineon Technologies
Description: HYBRIDPACK DSC S MODULE WITH SIC, Packaging: Tube, Package / Case: 11-PowerDIP Module (2.091", 53.10mm), Mounting Type: Through Hole, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 20mW, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 190A, Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 850V, Rds On (Max) @ Id, Vgs: 5.56mOhm @ 190A, 18V, Gate Charge (Qg) (Max) @ Vgs: 420nC @ 18V, Vgs(th) (Max) @ Id: 4.55V @ 60mA, Supplier Device Package: PG-MDIP-11-1, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FF06MR12A04MA2AKSA1 nach Preis ab 301.77 EUR bis 354.06 EUR
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FF06MR12A04MA2AKSA1 | Hersteller : Infineon Technologies |
Discrete Semiconductor Modules HybridPACK DSC S module with SiC MOSFET and NTC |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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