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FF100R12RT4HOSA1 Infineon Technologies


Infineon-FF100R12RT4-DS-v02_01-en_de.pdf?fileId=db3a304327b8975001280601349b615b
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A 555W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 630 nF @ 25 V
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Technische Details FF100R12RT4HOSA1 Infineon Technologies

Description: IGBT MOD 1200V 100A 555W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 555 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 630 nF @ 25 V.

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FF100R12RT4HOSA1 Infineon Technologies Infineon_FF100R12RT4_DS_v02_01_en_jp-3162181.pdf IGBT Modules MEDIUM POWER 34MM
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FF100R12RT4HOSA1 Infineon_FF100R12RT4_DS_v02_01_en_jp-3162181.pdf
Hersteller: Infineon Technologies
IGBT Modules MEDIUM POWER 34MM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH