Technische Details FF11MR12W2M1HB70BPSA1 Infineon Technologies
Description: INFINEON - FF11MR12W2M1HB70BPSA1 - MOSFET-Transistor, Halbbrücke, n-Kanal, 75 A, 1.2 kV, 0.0108 ohm, 18 V, 5.15 V, tariffCode: 85412900, euEccn: NLR, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 75A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 5.15V, Verlustleistung: 20mW, SVHC: No SVHC (25-Jun-2025), Produktpalette: EasyPACK CoolsiC Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, usEccn: EAR99, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 18V, Drain-Source-Durchgangswiderstand: 0.0108ohm.
Weitere Produktangebote FF11MR12W2M1HB70BPSA1 nach Preis ab 77.79 EUR bis 216.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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FF11MR12W2M1HB70BPSA1 | Infineon Technologies |
 Trans MOSFET N-CH SiC 1.2KV 75A 33-Pin Tray |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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FF11MR12W2M1HB70BPSA1 | INFINEON |
Description: INFINEON - FF11MR12W2M1HB70BPSA1 - MOSFET-Transistor, Halbbrücke, n-Kanal, 75 A, 1.2 kV, 0.0108 ohm, 18 V, 5.15 V tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Gate-Source-Schwellenspannung, max.: 5.15V Verlustleistung: 20mW SVHC: No SVHC (25-Jun-2025) Produktpalette: EasyPACK CoolsiC Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal usEccn: EAR99 Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 18V Drain-Source-Durchgangswiderstand: 0.0108ohm |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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FF11MR12W2M1HB70BPSA1 | Infineon Technologies |
MOSFET Modules EasyPACK module with CoolSiC Trench MOSFET |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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FF11MR12W2M1HB70BPSA1 | Infineon Technologies |
Description: LOW POWER EASY Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (Phase Leg + Boost Chopper) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 75A, 18V Gate Charge (Qg) (Max) @ Vgs: 223nC @ 18V Vgs(th) (Max) @ Id: 5.15V @ 30mA |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF11MR12W2M1HB70BPSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH SiC 1.2KV 75A 33-Pin Tray
Trans MOSFET N-CH SiC 1.2KV 75A 33-Pin Tray
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 182.9 EUR |
| 3+ | 77.79 EUR |
| FF11MR12W2M1HB70BPSA1 |
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Hersteller: INFINEON
Description: INFINEON - FF11MR12W2M1HB70BPSA1 - MOSFET-Transistor, Halbbrücke, n-Kanal, 75 A, 1.2 kV, 0.0108 ohm, 18 V, 5.15 V
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 75A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5.15V
Verlustleistung: 20mW
SVHC: No SVHC (25-Jun-2025)
Produktpalette: EasyPACK CoolsiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.0108ohm
Description: INFINEON - FF11MR12W2M1HB70BPSA1 - MOSFET-Transistor, Halbbrücke, n-Kanal, 75 A, 1.2 kV, 0.0108 ohm, 18 V, 5.15 V
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 75A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5.15V
Verlustleistung: 20mW
SVHC: No SVHC (25-Jun-2025)
Produktpalette: EasyPACK CoolsiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
usEccn: EAR99
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.0108ohm
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 207.24 EUR |
| FF11MR12W2M1HB70BPSA1 |
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Hersteller: Infineon Technologies
MOSFET Modules EasyPACK module with CoolSiC Trench MOSFET
MOSFET Modules EasyPACK module with CoolSiC Trench MOSFET
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 216.56 EUR |
| 10+ | 200.62 EUR |
| FF11MR12W2M1HB70BPSA1 |
|
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg + Boost Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs: 223nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 30mA
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg + Boost Chopper)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs: 223nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 30mA
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 216.71 EUR |