FF150R12ME3GBOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 695W
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 695 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Technische Details FF150R12ME3GBOSA1 Infineon Technologies
Description: IGBT MOD 1200V 200A 695W, Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 695 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 200 A, Part Status: Not For New Designs, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A, Operating Temperature: -40°C ~ 125°C, Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.
Weitere Produktangebote FF150R12ME3GBOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
FF150R12ME3GBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 200A 695WInput Capacitance (Cies) @ Vce: 10.5 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 695 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 200 A Part Status: Not For New Designs IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A Operating Temperature: -40°C ~ 125°C Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FF150R12ME3GBOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 695W
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 695 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MOD 1200V 200A 695W
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 695 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH

