FF150R12YT3BOMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 625W
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 625 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produktrezensionen
Produktbewertung abgeben
Technische Details FF150R12YT3BOMA1 Infineon Technologies
Description: IGBT MOD 1200V 200A 625W, Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 625 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 200 A, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A, Operating Temperature: -40°C ~ 125°C, Configuration: 2 Independent, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
