FF150R12YT3BOMA1 Infineon Technologies
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 93.03 EUR |
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Technische Details FF150R12YT3BOMA1 Infineon Technologies
Description: IGBT MOD 1200V 200A 625W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A, NTC Thermistor: Yes, Supplier Device Package: Module, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 625 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V.
Weitere Produktangebote FF150R12YT3BOMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FF150R12YT3BOMA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 200A 625W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 625 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V |
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