FF1MR12MM1HB11BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: FF1MR12MM1HB11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.91mOhm @ 500A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Supplier Device Package: AG-ECONOD
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Technische Details FF1MR12MM1HB11BPSA1 Infineon Technologies
Description: FF1MR12MM1HB11BPSA1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 420A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V, Rds On (Max) @ Id, Vgs: 1.91mOhm @ 500A, 18V, Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 224mA, Supplier Device Package: AG-ECONOD.
Weitere Produktangebote FF1MR12MM1HB11BPSA1 nach Preis ab 878.12 EUR bis 998.82 EUR
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FF1MR12MM1HB11BPSA1 | Infineon Technologies |
MOSFET Modules EconoDUAL 3 CoolSiC MOSFET 1200 V module |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF1MR12MM1HB11BPSA1 |
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Hersteller: Infineon Technologies
MOSFET Modules EconoDUAL 3 CoolSiC MOSFET 1200 V module
MOSFET Modules EconoDUAL 3 CoolSiC MOSFET 1200 V module
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 998.82 EUR |
| 10+ | 878.12 EUR |