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FF200R12KE3B2HOSA1

FF200R12KE3B2HOSA1 Infineon Technologies

Infineon-FF200R12KE3-DS-v03_01-en_cn.pdf?fileId=db3a30433dcf2fc4013dd01c80660219
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 295A 1050W MOD
Part Status: Active
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1050 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 295 A
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Technische Details FF200R12KE3B2HOSA1 Infineon Technologies

Description: IGBT MOD 1200V 295A 1050W MOD, Part Status: Active, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A, Operating Temperature: -40°C ~ 125°C, Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 1050 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 295 A.