FF200R12KT3EHOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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Technische Details FF200R12KT3EHOSA1 Infineon Technologies
Description: IGBT MODULE 1200V 1050W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1050 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.
Weitere Produktangebote FF200R12KT3EHOSA1 nach Preis ab 197.98 EUR bis 211.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
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FF200R12KT3EHOSA1 | Infineon Technologies |
Trans IGBT Module N-CH 1200V 295A 1050W 7-Pin 62MM-1 Tray |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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| FF200R12KT3EHOSA1 |
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Hersteller: Infineon Technologies
Trans IGBT Module N-CH 1200V 295A 1050W 7-Pin 62MM-1 Tray
Trans IGBT Module N-CH 1200V 295A 1050W 7-Pin 62MM-1 Tray
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 211.42 EUR |
| 100+ | 197.98 EUR |