FF200R12KT3EHOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 169.90 EUR |
Produktrezensionen
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Technische Details FF200R12KT3EHOSA1 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2, Type of semiconductor module: IGBT, Semiconductor structure: common emitter; transistor/transistor, Max. off-state voltage: 1.2kV, Case: AG-62MM-1, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Power dissipation: 1.05kW, Topology: IGBT x2, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Anzahl je Verpackung: 1 Stücke.
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Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of semiconductor module: IGBT Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Power dissipation: 1.05kW Topology: IGBT x2 Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FF200R12KT3EHOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MODULE 1200V 1050W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1050 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
Produkt ist nicht verfügbar |
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FF200R12KT3EHOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of semiconductor module: IGBT Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Power dissipation: 1.05kW Topology: IGBT x2 Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
Produkt ist nicht verfügbar |