FF200R12KT4HOSA1 Infineon Technologies
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 137.45 EUR |
| 10+ | 109.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FF200R12KT4HOSA1 Infineon Technologies
Description: IGBT MOD 1200V 320A 1100W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 320 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1100 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.
Weitere Produktangebote FF200R12KT4HOSA1 nach Preis ab 109.19 EUR bis 166.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FF200R12KT4HOSA1 | Hersteller : Infineon Technologies |
 Trans IGBT Module N-CH 1200V 320A 1100W 7-Pin 62MM-1 Tray |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
FF200R12KT4HOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Power dissipation: 1.1kW Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||
|
|
FF200R12KT4HOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Power dissipation: 1.1kW Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
FF200R12KT4HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 320A 1100W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
|
|
FF200R12KT4HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 320A 1100W 7-Pin 62MM-1 Tray |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
FF200R12KT4HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 320A 1100000mW Automotive 7-Pin 62MM-1 Tray |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||
|
|
FF200R12KT4HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 320A 1100W 7-Pin 62MM-1 Tray |
Produkt ist nicht verfügbar |
|||||||
|
|
FF200R12KT4HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 320A 1100W 7-Pin 62MM-1 Tray |
Produkt ist nicht verfügbar |
|||||||
| FF200R12KT4HOSA1 | Hersteller : Infineon Technologies |
IGBT Modules MEDIUM POWER 62MM |
Produkt ist nicht verfügbar |