FF200R12MT4BOMA1 Infineon Technologies

Description: IGBT MODULE 1200V 1050W, Configuration: 2 Independent, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 1050 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A, Operating Temperature: -40°C ~ 150°C.