FF200R17KE3S4HOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MODULE VCES 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
Description: IGBT MODULE VCES 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 296.65 EUR |
10+ | 277.84 EUR |
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Technische Details FF200R17KE3S4HOSA1 Infineon Technologies
Description: IGBT MODULE VCES 1200V 200A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 18 nF @ 25 V.
Weitere Produktangebote FF200R17KE3S4HOSA1 nach Preis ab 298.76 EUR bis 298.76 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FF200R17KE3S4HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MODULE VCES 1200V 200A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1250 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 18 nF @ 25 V |
auf Bestellung 328 Stücke: Lieferzeit 10-14 Tag (e) |
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FF200R17KE3S4HOSA1 | Hersteller : Infineon Technologies | FF200R17KE3S4HOSA1 |
Produkt ist nicht verfügbar |
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FF200R17KE3S4HOSA1 | Hersteller : Infineon Technologies | MEDIUM POWER 62MM |
Produkt ist nicht verfügbar |