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FF200R17KE3S4HOSA1

FF200R17KE3S4HOSA1 Infineon Technologies


Infineon-FF200R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043293a15c401293a9dbf5e0018 Hersteller: Infineon Technologies
Description: IGBT MODULE VCES 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
auf Bestellung 10 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+296.65 EUR
10+ 277.84 EUR
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Technische Details FF200R17KE3S4HOSA1 Infineon Technologies

Description: IGBT MODULE VCES 1200V 200A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 18 nF @ 25 V.

Weitere Produktangebote FF200R17KE3S4HOSA1 nach Preis ab 298.76 EUR bis 298.76 EUR

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FF200R17KE3S4HOSA1 FF200R17KE3S4HOSA1 Hersteller : Infineon Technologies Infineon-FF200R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043293a15c401293a9dbf5e0018 Description: IGBT MODULE VCES 1200V 200A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
auf Bestellung 328 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+298.76 EUR
Mindestbestellmenge: 2
FF200R17KE3S4HOSA1 Hersteller : Infineon Technologies Infineon-FF200R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043293a15c401293a9dbf5e0018 FF200R17KE3S4HOSA1
Produkt ist nicht verfügbar
FF200R17KE3S4HOSA1 Hersteller : Infineon Technologies Infineon-FF200R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043293a15c401293a9dbf5e0018 MEDIUM POWER 62MM
Produkt ist nicht verfügbar