FF200R17KE4HOSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
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Technische Details FF200R17KE4HOSA1 INFINEON TECHNOLOGIES
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A, Max. off-state voltage: 1.7kV, Semiconductor structure: transistor/transistor, Case: AG-62MM-1, Electrical mounting: screw, Type of semiconductor module: IGBT, Mechanical mounting: screw, Topology: IGBT half-bridge, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Power dissipation: 1.25kW.
Weitere Produktangebote FF200R17KE4HOSA1 nach Preis ab 224.18 EUR bis 315.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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FF200R17KE4 | Infineon Technologies |
IGBT Modules IGBT Module 200A 1700V |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF200R17KE4 |
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Hersteller: Infineon Technologies
IGBT Modules IGBT Module 200A 1700V
IGBT Modules IGBT Module 200A 1700V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 315.02 EUR |
| 10+ | 224.18 EUR |