Technische Details FF200R17KE4PHPSA1 Infineon Technologies
Description: MEDIUM POWER 62MM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: AG-62MMHB, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 18 nF @ 25 V.
Weitere Produktangebote FF200R17KE4PHPSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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FF200R17KE4PHPSA1 | Hersteller : Infineon Technologies |
Description: MEDIUM POWER 62MM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A NTC Thermistor: No Supplier Device Package: AG-62MMHB IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1250 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 18 nF @ 25 V |
Produkt ist nicht verfügbar |
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FF200R17KE4PHPSA1 | Hersteller : Infineon Technologies | IGBT Modules |
Produkt ist nicht verfügbar |