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FF200R17KE4PHPSA1 Infineon Technologies


Hersteller: Infineon Technologies
FF200R17KE4PHPSA1
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Technische Details FF200R17KE4PHPSA1 Infineon Technologies

Description: MEDIUM POWER 62MM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: AG-62MMHB, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 18 nF @ 25 V.

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FF200R17KE4PHPSA1 Hersteller : Infineon Technologies Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
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FF200R17KE4PHPSA1 Hersteller : Infineon Technologies Infineon_FF200R17KE4_DataSheet_v02_02_EN-3107493.pdf IGBT Modules
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