FF225R12ME4PBPSA1 Infineon Technologies
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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 229.43 EUR |
| 12+ | 212.43 EUR |
| 30+ | 204.69 EUR |
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Technische Details FF225R12ME4PBPSA1 Infineon Technologies
Description: IGBT MOD 1200V 450A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 450 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V.
Weitere Produktangebote FF225R12ME4PBPSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FF225R12ME4PBPSA1 | Hersteller : Infineon Technologies |
 Trans IGBT Module N-CH 1200V 225A 11-Pin Tray |
Produkt ist nicht verfügbar |
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FF225R12ME4PBPSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 450A 20MW Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
Produkt ist nicht verfügbar |