FF2MR12KM1HHPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Discrete Semiconductor Modules 1200V, 62mm Module with CoolSiC Trench MOSFET
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Technische Details FF2MR12KM1HHPSA1 Infineon Technologies
Description: MEDIUM POWER 62MM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, NTC Thermistor: No, Supplier Device Package: AG-62MMHB, IGBT Type: Trench Field Stop, Voltage - Collector Emitter Breakdown (Max): 1200 V.
Weitere Produktangebote FF2MR12KM1HHPSA1 nach Preis ab 1059.17 EUR bis 1097.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||
|---|---|---|---|---|---|---|---|---|---|
| FF2MR12KM1HHPSA1 | Infineon Technologies |
Description: MEDIUM POWER 62MM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge NTC Thermistor: No Supplier Device Package: AG-62MMHB IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FF2MR12KM1HHPSA1 |
Hersteller: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1097.45 EUR |
| 10+ | 1059.17 EUR |

