FF3MR12KM1HOSA1 Infineon Technologies
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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1566.63 EUR |
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Technische Details FF3MR12KM1HOSA1 Infineon Technologies
Description: SIC 2N-CH 1200V 375A AG-62MM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 375A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V, Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V, Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V, Vgs(th) (Max) @ Id: 5.15V @ 168mA, Supplier Device Package: AG-62MM.
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| FF3MR12KM1HOSA1 | Hersteller : Infineon Technologies |
 Half-bridge MOSFET Module |
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FF3MR12KM1HOSA1 | Hersteller : Infineon Technologies |
Description: SIC 2N-CH 1200V 375A AG-62MM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V Vgs(th) (Max) @ Id: 5.15V @ 168mA Supplier Device Package: AG-62MM |
Produkt ist nicht verfügbar |