FF3MR12KM1HOSA1 Infineon Technologies

Description: MOSFET 2N-CH 1200V 375A AG-62MM, Supplier Device Package: AG-62MM, Vgs(th) (Max) @ Id: 5.15V @ 168mA, Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V, Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V, Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 375A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.