FF450R12KE4HOSA1 Infineon Technologies
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 490.05 EUR |
5+ | 418.76 EUR |
10+ | 375.5 EUR |
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Technische Details FF450R12KE4HOSA1 Infineon Technologies
Description: IGBT MOD 1200V 520A 2400W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 520 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 2400 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V.
Weitere Produktangebote FF450R12KE4HOSA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FF450R12KE4HOSA1 | Hersteller : Infineon Technologies | Trans IGBT Module N-CH 1200V 520A 2400000mW Automotive 7-Pin 62MM-1 Tray |
Produkt ist nicht verfügbar |
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FF450R12KE4HOSA1 | Hersteller : Infineon Technologies | Trans IGBT Module N-CH 1200V 520A 2400W 7-Pin 62MM-1 Tray |
Produkt ist nicht verfügbar |
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FF450R12KE4HOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 2.4kW Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FF450R12KE4HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 520A 2400W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 520 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2400 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
Produkt ist nicht verfügbar |
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FF450R12KE4HOSA1 | Hersteller : Infineon Technologies | IGBT Modules MEDIUM POWER 62MM |
Produkt ist nicht verfügbar |
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FF450R12KE4HOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 2.4kW |
Produkt ist nicht verfügbar |