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FF450R12KE4HOSA1

FF450R12KE4HOSA1 Infineon Technologies


8360ds_ff450r12ke4_2_2.pdffolderiddb3a304412b407950112b4095b0601e3fil.pdf Hersteller: Infineon Technologies
Trans IGBT Module N-CH 1200V 520A 2400W 7-Pin 62MM-1 Tray
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Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+490.05 EUR
5+ 418.76 EUR
10+ 375.5 EUR
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Technische Details FF450R12KE4HOSA1 Infineon Technologies

Description: IGBT MOD 1200V 520A 2400W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 520 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 2400 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V.

Weitere Produktangebote FF450R12KE4HOSA1

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FF450R12KE4HOSA1 FF450R12KE4HOSA1 Hersteller : Infineon Technologies 8360ds_ff450r12ke4_2_2.pdffolderiddb3a304412b407950112b4095b0601e3fil.pdf Trans IGBT Module N-CH 1200V 520A 2400000mW Automotive 7-Pin 62MM-1 Tray
Produkt ist nicht verfügbar
FF450R12KE4HOSA1 FF450R12KE4HOSA1 Hersteller : Infineon Technologies 8360ds_ff450r12ke4_2_2.pdffolderiddb3a304412b407950112b4095b0601e3fil.pdf Trans IGBT Module N-CH 1200V 520A 2400W 7-Pin 62MM-1 Tray
Produkt ist nicht verfügbar
FF450R12KE4HOSA1 Hersteller : INFINEON TECHNOLOGIES FF450R12KE4-DTE.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FF450R12KE4HOSA1 FF450R12KE4HOSA1 Hersteller : Infineon Technologies Infineon-FF450R12KE4-DS-v02_02-en_de.pdf?fileId=db3a3043156fd57301161a1705031df8 Description: IGBT MOD 1200V 520A 2400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 520 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Produkt ist nicht verfügbar
FF450R12KE4HOSA1 Hersteller : Infineon Technologies Infineon_FF450R12KE4_DS_v02_02_en_jp-3162609.pdf IGBT Modules MEDIUM POWER 62MM
Produkt ist nicht verfügbar
FF450R12KE4HOSA1 Hersteller : INFINEON TECHNOLOGIES FF450R12KE4-DTE.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Produkt ist nicht verfügbar