Produkte > INFINEON TECHNOLOGIES > FF45MR12W1M1B11BOMA1
FF45MR12W1M1B11BOMA1

FF45MR12W1M1B11BOMA1 INFINEON TECHNOLOGIES


pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF602B81B1258BF&compId=FF45MR12W1M1B11.pdf?ci_sign=f5b3f9ed9a3dcffcc3c66b2489eb90dc08bf9b53 Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.50 EUR
10+66.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FF45MR12W1M1B11BOMA1 INFINEON TECHNOLOGIES

Description: MOSFET 2N-CH 1200V AG-EASY1BM-2, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 25A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V, Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ), Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 10mA, Supplier Device Package: AG-EASY1BM-2, Part Status: Obsolete.

Weitere Produktangebote FF45MR12W1M1B11BOMA1 nach Preis ab 71.50 EUR bis 133.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF602B81B1258BF&compId=FF45MR12W1M1B11.pdf?ci_sign=f5b3f9ed9a3dcffcc3c66b2489eb90dc08bf9b53 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 Hersteller : Infineon Technologies Infineon-FF45MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d46266f85d6301670c714a15315c Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1BM-2
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+87.12 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 Hersteller : Infineon Technologies Infineon_FF45MR12W1M1_B11_DataSheet_v02_02_EN-1915665.pdf Discrete Semiconductor Modules LOW POWER EASY
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+133.51 EUR
10+120.98 EUR
24+120.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 Hersteller : Infineon Technologies infineon-ff45mr12w1m1_b11-datasheet-v02_02-en.pdf Trans MOSFET N-CH 1.2KV 25A Tray
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 Hersteller : Infineon Technologies Infineon-FF45MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d46266f85d6301670c714a15315c Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1BM-2
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH