FF45MR12W1M1B11BOMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Polarisation: unipolar
Gate-source voltage: -10...20V
On-state resistance: 45mΩ
Technology: CoolSiC™; SiC
Drain current: 25A
Pulsed drain current: 50A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
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Technische Details FF45MR12W1M1B11BOMA1 INFINEON TECHNOLOGIES
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 25A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V, Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ), Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 10mA, Supplier Device Package: AG-EASY1BM-2, Part Status: Obsolete.
Weitere Produktangebote FF45MR12W1M1B11BOMA1 nach Preis ab 102.88 EUR bis 133.51 EUR
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FF45MR12W1M1B11BOMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ) Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 10mA Supplier Device Package: AG-EASY1BM-2 |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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FF45MR12W1M1B11BOMA1 | Infineon Technologies |
Discrete Semiconductor Modules LOW POWER EASY |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF45MR12W1M1B11BOMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1BM-2
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1BM-2
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 102.88 EUR |
| FF45MR12W1M1B11BOMA1 |
|
Hersteller: Infineon Technologies
Discrete Semiconductor Modules LOW POWER EASY
Discrete Semiconductor Modules LOW POWER EASY
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 133.51 EUR |
| 10+ | 120.98 EUR |
| 24+ | 120.96 EUR |