Technische Details FF4MR12W2M1HB11BPSA1 Infineon Technologies
Description: SIC 2N-CH 1200V 170A MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 170A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V, Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V, Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 80mA, Supplier Device Package: Module.
Weitere Produktangebote FF4MR12W2M1HB11BPSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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FF4MR12W2M1HB11BPSA1 | Infineon Technologies |
 Description: SIC 2N-CH 1200V 170A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V Vgs(th) (Max) @ Id: 5.15V @ 80mA Supplier Device Package: Module |
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| FF4MR12W2M1HB11BPSA1 |
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Hersteller: Infineon Technologies
Description: SIC 2N-CH 1200V 170A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: Module
Description: SIC 2N-CH 1200V 170A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: Module
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH