FF4MR12W2M1HB70BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
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Technische Details FF4MR12W2M1HB70BPSA1 Infineon Technologies
Description: LOW POWER EASY, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 200A, Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V, Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V, Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 80mA.
Weitere Produktangebote FF4MR12W2M1HB70BPSA1 nach Preis ab 311.68 EUR bis 311.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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FF4MR12W2M1HB70BPSA1 | Infineon Technologies |
MOSFET Modules CoolSiC MOSFET half-bridge module 1200 V |
auf Bestellung 51 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FF4MR12W2M1HB70BPSA1 |
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Hersteller: Infineon Technologies
MOSFET Modules CoolSiC MOSFET half-bridge module 1200 V
MOSFET Modules CoolSiC MOSFET half-bridge module 1200 V
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 311.68 EUR |