FF4MR20KM1HHPSA1 Infineon Technologies
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1275.65 EUR |
| 20+ | 1129.43 EUR |
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Technische Details FF4MR20KM1HHPSA1 Infineon Technologies
Description: SIC 2N-CH 2000V AG-62MMHB, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 2000V (2kV), Current - Continuous Drain (Id) @ 25°C: 280A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV, Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V, Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 5.15V @ 168mA, Supplier Device Package: AG-62MMHB.
Weitere Produktangebote FF4MR20KM1HHPSA1 nach Preis ab 1361.13 EUR bis 1361.13 EUR
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FF4MR20KM1HHPSA1 | Hersteller : Infineon Technologies |
Description: SIC 2N-CH 2000V AG-62MMHB Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 2000V (2kV) Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 5.15V @ 168mA Supplier Device Package: AG-62MMHB |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF4MR20KM1HHPSA1 | Hersteller : Infineon Technologies |
 62 mm C-Series Module with CoolSiC Trench MOSFET |
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