FF50R12RT4HOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1200V 50A 285W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 285 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
auf Bestellung 5725 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 178.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FF50R12RT4HOSA1 Infineon Technologies
Description: IGBT MOD 1200V 50A 285W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 285 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V.
Weitere Produktangebote FF50R12RT4HOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
|
|
FF50R12RT4HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 50A 285W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 285 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
FF50R12RT4HOSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Topology: IGBT half-bridge Mechanical mounting: screw Power dissipation: 285W Application: for UPS; Inverter; motors; photovoltaics Type of module: IGBT Max. off-state voltage: 1.2kV Collector current: 50A Gate-emitter voltage: ±20V Pulsed collector current: 100A Case: AG-34MM-1 Semiconductor structure: transistor/transistor Electrical mounting: screw |
Produkt ist nicht verfügbar |