FF600R12ME4B73BPSA1 Infineon Technologies
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Technische Details FF600R12ME4B73BPSA1 Infineon Technologies
Description: IGBT MOD 1200V 1200A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 1200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 37 nF @ 25 V.
Weitere Produktangebote FF600R12ME4B73BPSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FF600R12ME4B73BPSA1 | Hersteller : Infineon Technologies |
 EconoDUAL 3 module with Trench/Field stop IGBT4 and Emitter Controlled diode and PressFIT / NTC |
Produkt ist nicht verfügbar |
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FF600R12ME4B73BPSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 1200A 20MW Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
Produkt ist nicht verfügbar |