FF650R17IE4DPB2BOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 650A
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 650 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
Operating Temperature: -40°C ~ 150°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details FF650R17IE4DPB2BOSA1 Infineon Technologies
Description: IGBT MODULE 1700V 650A, Input Capacitance (Cies) @ Vce: 54 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 650 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A, Operating Temperature: -40°C ~ 150°C, Configuration: 2 Independent, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote FF650R17IE4DPB2BOSA1 nach Preis ab 685.25 EUR bis 798.65 EUR
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FF650R17IE4DPB2BOSA1 | Infineon Technologies |
Trench Field Stop IGBT Module |
auf Bestellung 594 Stücke: Lieferzeit 14-21 Tag (e) |
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| FF650R17IE4DPB2BOSA1 |
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Hersteller: Infineon Technologies
Trench Field Stop IGBT Module
Trench Field Stop IGBT Module
auf Bestellung 594 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 798.65 EUR |
| 25+ | 763.63 EUR |
| 100+ | 723.92 EUR |
| 500+ | 685.25 EUR |