FF650R17IE4DPB2BOSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 780.29 EUR |
| 25+ | 729.86 EUR |
| 100+ | 681.08 EUR |
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Technische Details FF650R17IE4DPB2BOSA1 Infineon Technologies
Description: IGBT MODULE 1700V 650A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 650 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 54 nF @ 25 V.
Weitere Produktangebote FF650R17IE4DPB2BOSA1 nach Preis ab 791.88 EUR bis 791.88 EUR
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FF650R17IE4DPB2BOSA1 | Hersteller : Infineon Technologies |
 Description: IGBT MODULE 1700V 650APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 650 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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FF650R17IE4DPB2BOSA1 | Hersteller : Infineon Technologies |
Trench Field Stop IGBT Module |
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