Technische Details FF650R17IE4PB60BPSA1 Infineon Technologies
Description: PP IHM I, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A, NTC Thermistor: Yes, Current - Collector (Ic) (Max): 930 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 4150 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V.
Weitere Produktangebote FF650R17IE4PB60BPSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FF650R17IE4PB60BPSA1 | Hersteller : Infineon Technologies |
Description: PP IHM I Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A NTC Thermistor: Yes Current - Collector (Ic) (Max): 930 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 4150 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FF650R17IE4PB60BPSA1 | Hersteller : Infineon Technologies |
 IGBT Modules 1700 V, 650 A dual IGBT module |
Produkt ist nicht verfügbar |