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FF650R17IE4PBOSA1 Infineon Technologies

Infineon-FF650R17IE4P-DS-v03_00-EN.pdf?fileId=5546d46253e9fadc0153efeab1493c89
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 650A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
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Technische Details FF650R17IE4PBOSA1 Infineon Technologies

Description: IGBT MODULE 1700V 650A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), NTC Thermistor: Yes, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 650 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V.