FF6MR12W2M1HPB11BPSA1 Infineon Technologies
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 285.05 EUR |
| 10+ | 242.93 EUR |
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Technische Details FF6MR12W2M1HPB11BPSA1 Infineon Technologies
Description: SIC 2N-CH 1200V 200A MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V, Current - Continuous Drain (Id) @ 25°C: 200A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V, Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V, Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 5.55V @ 80mA, Supplier Device Package: Module.
Weitere Produktangebote FF6MR12W2M1HPB11BPSA1 nach Preis ab 326.94 EUR bis 349.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FF6MR12W2M1HPB11BPSA1 | Hersteller : Infineon Technologies |
 Description: SIC 2N-CH 1200V 200A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 5.55V @ 80mA Supplier Device Package: Module |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF6MR12W2M1HPB11BPSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 150A |
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