FF6MR12W2M1HPB11BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Supplier Device Package: Module
Produktrezensionen
Produktbewertung abgeben
Technische Details FF6MR12W2M1HPB11BPSA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V 200A MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 200A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V, Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V, Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 80mA, Supplier Device Package: Module.
Weitere Produktangebote FF6MR12W2M1HPB11BPSA1 nach Preis ab 269.55 EUR bis 279.41 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
FF6MR12W2M1HPB11BPSA1 | Infineon Technologies |
MOSFET Modules 1200 V CoolSiC Mosfet Half-Bridge Module |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FF6MR12W2M1HPB11BPSA1 |
|
Hersteller: Infineon Technologies
MOSFET Modules 1200 V CoolSiC Mosfet Half-Bridge Module
MOSFET Modules 1200 V CoolSiC Mosfet Half-Bridge Module
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 279.41 EUR |
| 10+ | 269.55 EUR |