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Technische Details FF7MR12W1M1HB17BPSA1 Infineon Technologies
Description: INFINEON - FF7MR12W1M1HB17BPSA1 - MOSFET-Transistor, n-Kanal, 105 A, 1.2 kV, 5800 µohm, 18 V, 5.15 V, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 105A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5.15V, euEccn: NLR, Verlustleistung: 20mW, Produktpalette: EasyDUAL Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 5800µohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote FF7MR12W1M1HB17BPSA1 nach Preis ab 163.21 EUR bis 188.94 EUR
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FF7MR12W1M1HB17BPSA1 | Infineon Technologies |
 Description: MOSFET 2N-CH 1200V AG-EASY1BGate Charge (Qg) (Max) @ Vgs: 400nC @ 18V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 120A, 18V Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 800V Current - Continuous Drain (Id) @ 25°C: 105A (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 20mW Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Supplier Device Package: AG-EASY1B Vgs(th) (Max) @ Id: 5.15V @ 56mA Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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FF7MR12W1M1HB17BPSA1 | INFINEON |
Description: INFINEON - FF7MR12W1M1HB17BPSA1 - MOSFET-Transistor, n-Kanal, 105 A, 1.2 kV, 5800 µohm, 18 V, 5.15 V tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 105A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.15V euEccn: NLR Verlustleistung: 20mW Produktpalette: EasyDUAL Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 5800µohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FF7MR12W1M1HB17BPSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1B
Gate Charge (Qg) (Max) @ Vgs: 400nC @ 18V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 120A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 20mW
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Supplier Device Package: AG-EASY1B
Vgs(th) (Max) @ Id: 5.15V @ 56mA
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 2N-CH 1200V AG-EASY1B
Gate Charge (Qg) (Max) @ Vgs: 400nC @ 18V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 120A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 105A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 20mW
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Supplier Device Package: AG-EASY1B
Vgs(th) (Max) @ Id: 5.15V @ 56mA
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 188.94 EUR |
| 24+ | 163.21 EUR |
| FF7MR12W1M1HB17BPSA1 |
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Hersteller: INFINEON
Description: INFINEON - FF7MR12W1M1HB17BPSA1 - MOSFET-Transistor, n-Kanal, 105 A, 1.2 kV, 5800 µohm, 18 V, 5.15 V
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 105A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.15V
euEccn: NLR
Verlustleistung: 20mW
Produktpalette: EasyDUAL Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 5800µohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - FF7MR12W1M1HB17BPSA1 - MOSFET-Transistor, n-Kanal, 105 A, 1.2 kV, 5800 µohm, 18 V, 5.15 V
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 105A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.15V
euEccn: NLR
Verlustleistung: 20mW
Produktpalette: EasyDUAL Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 5800µohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)