FF8MR12W1M1HB70BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Discrete Semiconductor Modules CoolSiC MOSFET half-bridge module 1200 V
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Technische Details FF8MR12W1M1HB70BPSA1 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; 1.2kV; 100A; module,semiconductor, Type of transistor: N-MOSFET, Drain-source voltage: 1.2kV, Drain current: 100A, Gate-source voltage: 20V, On-state resistance: 8.1mΩ, Kind of channel: enhancement, Version: module; semiconductor.
Weitere Produktangebote FF8MR12W1M1HB70BPSA1 nach Preis ab 150.06 EUR bis 150.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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|---|---|---|---|---|---|---|---|
| FF8MR12W1M1HB70BPSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 1.2kV; 100A; module,semiconductor Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 100A Gate-source voltage: 20V On-state resistance: 8.1mΩ Kind of channel: enhancement Version: module; semiconductor |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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| FF8MR12W1M1HB70BPSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1.2kV; 100A; module,semiconductor
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 100A
Gate-source voltage: 20V
On-state resistance: 8.1mΩ
Kind of channel: enhancement
Version: module; semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1.2kV; 100A; module,semiconductor
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 100A
Gate-source voltage: 20V
On-state resistance: 8.1mΩ
Kind of channel: enhancement
Version: module; semiconductor
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 150.06 EUR |