FF8MR12W1M1HS4PB11BPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDiscrete Semiconductor Modules CoolSiC 1200 V 8 mOhm Trench MOSFET in EasyDUAL
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 184.47 EUR |
| 10+ | 165.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FF8MR12W1M1HS4PB11BPSA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 100A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V, Rds On (Max) @ Id, Vgs: 8.1mOhm @ 100A, 18V, Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 40mA, Supplier Device Package: AG-EASY1B, Part Status: Active.
Weitere Produktangebote FF8MR12W1M1HS4PB11BPSA1 nach Preis ab 169.28 EUR bis 195.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FF8MR12W1M1HS4PB11BPSA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 1200V AG-EASY1B Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V Rds On (Max) @ Id, Vgs: 8.1mOhm @ 100A, 18V Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V Vgs(th) (Max) @ Id: 5.15V @ 40mA Supplier Device Package: AG-EASY1B Part Status: Active |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| FF8MR12W1M1HS4PB11BPSA1 | Hersteller : Infineon Technologies |
SP005830971 |
Produkt ist nicht verfügbar |