FF8MR12W1M1HS4PB11BPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET 2N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 40mA
Supplier Device Package: AG-EASY1B
Part Status: Active
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 206.10 EUR |
| 30+ | 178.29 EUR |
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Technische Details FF8MR12W1M1HS4PB11BPSA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 100A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V, Rds On (Max) @ Id, Vgs: 8.1mOhm @ 100A, 18V, Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 40mA, Supplier Device Package: AG-EASY1B, Part Status: Active.
Weitere Produktangebote FF8MR12W1M1HS4PB11BPSA1 nach Preis ab 191.29 EUR bis 209.05 EUR
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FF8MR12W1M1HS4PB11BPSA1 | Hersteller : Infineon Technologies |
Discrete Semiconductor Modules CoolSiC 1200 V 8 mOhm Trench MOSFET in EasyDUAL |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF8MR12W1M1HS4PB11BPSA1 | Hersteller : Infineon Technologies |
SP005830971 |
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