FF8MR12W1M1HS4PB11BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Discrete Semiconductor Modules CoolSiC 1200 V 8 mOhm Trench MOSFET in EasyDUAL
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Technische Details FF8MR12W1M1HS4PB11BPSA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1B, Part Status: Active, Supplier Device Package: AG-EASY1B, Vgs(th) (Max) @ Id: 5.15V @ 40mA, Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V, Rds On (Max) @ Id, Vgs: 8.1mOhm @ 100A, 18V, Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 100A (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote FF8MR12W1M1HS4PB11BPSA1 nach Preis ab 146.57 EUR bis 187.22 EUR
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FF8MR12W1M1HS4PB11BPSA1 | Infineon Technologies |
Description: MOSFET 2N-CH 1200V AG-EASY1B Part Status: Active Supplier Device Package: AG-EASY1B Vgs(th) (Max) @ Id: 5.15V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V Rds On (Max) @ Id, Vgs: 8.1mOhm @ 100A, 18V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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| FF8MR12W1M1HS4PB11BPSA1 | Infineon Technologies |
FF8MR12W1M1HS4PB11BPSA1 |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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| FF8MR12W1M1HS4PB11BPSA1 | Infineon Technologies |
FF8MR12W1M1HS4PB11BPSA1 |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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| FF8MR12W1M1HS4PB11BPSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1B
Part Status: Active
Supplier Device Package: AG-EASY1B
Vgs(th) (Max) @ Id: 5.15V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 100A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 2N-CH 1200V AG-EASY1B
Part Status: Active
Supplier Device Package: AG-EASY1B
Vgs(th) (Max) @ Id: 5.15V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 100A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 187.22 EUR |
| 30+ | 146.57 EUR |
| FF8MR12W1M1HS4PB11BPSA1 |
|
Hersteller: Infineon Technologies
FF8MR12W1M1HS4PB11BPSA1
FF8MR12W1M1HS4PB11BPSA1
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 182.71 EUR |
| FF8MR12W1M1HS4PB11BPSA1 |
|
Hersteller: Infineon Technologies
FF8MR12W1M1HS4PB11BPSA1
FF8MR12W1M1HS4PB11BPSA1
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 182.71 EUR |
| 100+ | 171.1 EUR |