FF900R12IE4PBOSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT MOD 1200V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 704.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FF900R12IE4PBOSA1 Infineon Technologies
Description: IGBT MOD 1200V 900A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 900 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 54 nF @ 25 V.
Weitere Produktangebote FF900R12IE4PBOSA1 nach Preis ab 791.49 EUR bis 791.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
FF900R12IE4PBOSA1 | Hersteller : Infineon Technologies |
IGBT Modules 1200 V, 900 A dual IGBT module |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
 |
FF900R12IE4PBOSA1 | Hersteller : Infineon Technologies |
1200V PrimePACK 2 dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and pre-applied Thermal Interface Material. |
Produkt ist nicht verfügbar |
|||||
 |
FF900R12IE4PBOSA1 | Hersteller : Infineon Technologies |
1200V PrimePACK 2 dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and pre-applied Thermal Interface Material. |
Produkt ist nicht verfügbar |