FFM107-N-H Formosa Microsemi Co., Ltd.
Hersteller: Formosa Microsemi Co., Ltd.
Description: DIODE GEN PURP 1KV 1A SOD323
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 76+ | 0.23 EUR |
| 99+ | 0.18 EUR |
| 128+ | 0.14 EUR |
| 500+ | 0.068 EUR |
| 1000+ | 0.057 EUR |
| 3000+ | 0.052 EUR |
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Technische Details FFM107-N-H Formosa Microsemi Co., Ltd.
Description: DIODE GEN PURP 1KV 1A SOD323, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: SOD-323, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 4pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 500 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SC-90, SOD-323F, Packaging: Tape & Reel (TR).